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Typical Characteristics T C = 25°C unless otherwise noted
1000
100
10 μ s
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100 μ s
10
1
OPERATION IN THIS
AREA MAY BE LIMITED
BY r DS(ON)
SINGLE PULSE
T J = MA X RATED
T C = 25 o C
1ms
10ms
100ms
DC
10
STARTING T J = 150 o C
STARTING T J = 25 o C
0.1
1
1
10
100
0.01
0.1
1
10
100
1000
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
160
140
120
100
80
60
40
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DS = 6V
T A = 125 o C
T A = 25 o C
160
140
120
100
80
60
40
5.0V
10V
4.5V
4.0V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
3.5V
20
0
0
T A = -55 o C
1 2 3 4
V GS , GATE TO SOURCE VOLTAGE (V)
5
20
0
0
3.0V
0.5 1.0 1.5
V DS , DRAIN TO SOURCE VOLTAGE (V)
2.0
0.016
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
2.2
0.014
I D = 20A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.0
I D = 80A
V GS = 10V
0.012
1.8
0.010
T A = 175 o C
1.6
1.4
0.008
0.006
T A = 25 o C
1.2
1.0
0.004
0.8
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0.002
2
4 6 8
V GS , GATE TO SOURCE VOLTAGE (V)
10
0.6
- 80
- 40
0 40 80 120
T J , AMBIENT TEMPERATURE ( o C)
160
200
Figure 9. On-Resistance Variation vs Gate-to-
Figure 10. Normalized Drain to Source On
?200 5 Fairchild Semiconductor Corporation
FDB5800 Rev. C2
4
www.fairchildsemi.com
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